Enhanced electro-optic effect in GaInAsP–InP three-step quantum wells
نویسنده
چکیده
We report on the enhanced electro-optic coefficient of GaInAsP three-step quantum wells ~3SQW! for high power electrorefraction modulator applications. Measured electro-optic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well ~RQW! at l51.55 mm. The enhanced electro-optic effect, combined with a low optical absorption coefficient a,1 cm in the 3SQW increases a modulator figure of merit by nearly 36 times, and decreases the power consumption by nearly one order of magnitude compared with a conventional RQW design. © 2004 American Institute of Physics. @DOI: 10.1063/1.1682699#
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High Performance Phase and Amplitude Modulators Based on GaInAsP Stepped Quantum Wells
Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm in the 3SQW increased t...
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